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Electroluminescence devices based on Si quantum dots/SiC multilayers embedded in PN junction

X Xu, YQ Cao, P Lu, J Xu, W Li… - IEEE Photonics …, 2013 - ieeexplore.ieee.org
We deposited a pin structure device with alternative amorphous Si (a-Si) and amorphous
SiC (a-SiC) multilayers as an intrinsic layer in a plasma-enhanced chemical vapor …
被引用次数：20 相关文章
[PDF] researchgate.net

[PDF][PDF] Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN Junction

X Xu, YQ Cao, P Lu, W Li, KJ Chen - researchgate.net
We deposited a pin structure device with alternative amorphous Si (a-Si) and amorphous
SiC (a-SiC) multilayers as an intrinsic layer in a plasma-enhanced chemical vapor …

Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN Junction

X Xu, YQ Cao, P Lu, J Xu, W Li, KJ Chen - IEEE Photonics Journal, 2014 - infona.pl
We deposited a pin structure device with alternative amorphous Si (a-Si) and amorphous
SiC (a-SiC) multilayers as an intrinsic layer in a plasma-enhanced chemical vapor …

[引用][C] Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN Junction

X Xu, YQ Cao, P Lu, J Xu, W Li… - IEEE Photonics …, 2014 - ui.adsabs.harvard.edu
Electroluminescence Devices Based on Si Quantum Dots/SiC Multilayers Embedded in PN
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