Origin of high storage capacity in N-doped graphene quantum dots
Study of high performance supercapacitor using doping and edge states in graphene is an
interesting area of research, however, the storage capacity and understanding of the origin …
interesting area of research, however, the storage capacity and understanding of the origin …
[引用][C] Origin of high storage capacity in N-doped graphene quantum dots
M Miah, S Bhattacharya, A Gupta, SK Saha - Electrochimica Acta, 2016 - cir.nii.ac.jp
Origin of high storage capacity in N-doped graphene quantum dots | CiNii Research CiNii 国立
情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす …
情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす …
Origin of high storage capacity in N-doped graphene quantum dots
M Miah, S Bhattacharya, A Gupta, SK Saha - Electrochimica Acta, 2016 - infona.pl
Study of high performance supercapacitor using doping and edge states in graphene is an
interesting area of research, however, the storage capacity and understanding of the origin …
interesting area of research, however, the storage capacity and understanding of the origin …