Ta–Si contacts to n-SiC for high temperatures devices

A Piotrowska, E Kaminska, A Stonert, A Turos - Materials Science and …, 2006 - Elsevier
The properties of Ta–Si contact to n-SiC have been investigated by complementary use of
2MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction measurements …
被引用次数：19 相关文章
[PDF] researchgate.net

[PDF][PDF] Ta–Si contacts to n-SiC for high temperatures devices

M Guziewicz, A Piotrowska, E Kaminska… - … and Engineering B, 2006 - researchgate.net
Abstract The properties of Ta–Si contact to n-SiC have been investigated by complementary
use of 2 MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction …

Ta-Si contacts to n-SiC for high temperatures devices

M Guziewicz, A Piotrowska, E Kaminska… - Materials Science and …, 2006 - elibrary.ru
The properties of Ta-Si contact to n-SiC have been investigated by complementary use of 2
MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction measurements …

Ta–Si contacts to n-SiC for high temperatures devices

M Guziewicz, A Piotrowska, E Kamińska… - MATERIALS …, 2006 - repo.pw.edu.pl
The properties of Ta–Si contact to n-SiC have been investigated by complementary use of 2
MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction measurements …
[PDF] academia.edu

[PDF][PDF] Ta–Si contacts to n-SiC for high temperatures devices

M Guziewicza, A Piotrowskaa, E Kaminskaa… - Materials Science and …, 2006 - academia.edu
Abstract The properties of Ta–Si contact to n-SiC have been investigated by complementary
use of 2 MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction …
[HTML] osti.gov

[HTML][HTML] Ta-Si contacts to n-SiC for high temperatures devices

M Guziewicz, A Piotrowska, E Kaminska… - Materials Science and …, 2006 - osti.gov
The properties of Ta-Si contact to n-SiC have been investigated by complementary use of 2
MeV He {sup+} Rutherford backscattering spectroscopy and X-ray diffraction measurements …

Ta–Si contacts to n-SiC for high temperatures devices

M Guziewicz, A Piotrowska, E Kaminska… - Materials Science & …, 2006 - infona.pl
The properties of Ta–Si contact to n-SiC have been investigated by complementary use of
2MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction measurements …

Ta-Si contacts to n-SiC for high temperatures devices

M Guziewicz, A Piotrowska, E Kaminska… - Materials Science and …, 2006 - inis.iaea.org
[en] The properties of Ta-Si contact to n-SiC have been investigated by complementary use
of 2 MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction measurements …

Ta–Si contacts to n-SiC for high temperatures devices

M Guziewicz, A Piotrowska, E Kamińska… - MATERIALS …, 2006 - repo.pw.edu.pl
The properties of Ta–Si contact to n-SiC have been investigated by complementary use of 2
MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction measurements …
[PDF] academia.edu

[PDF][PDF] Ta–Si contacts to n-SiC for high temperatures devices

M Guziewicza, A Piotrowskaa, E Kaminskaa… - Materials Science and …, 2006 - academia.edu
Abstract The properties of Ta–Si contact to n-SiC have been investigated by complementary
use of 2 MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction …