Growth and Characterization of InP‐lnGaAsP Lattice-Matched Heterojunctions
GA Antypas, RL Moon - Journal of The Electrochemical Society, 1973 - iopscience.iop.org
Liquid phase epitaxy has been employed for the growth of InP-InGaAsP lattice-matched
heterojunctions. The epitaxial layers were grown at 650 625~ on (100),(lll) A, and (lll) B …
heterojunctions. The epitaxial layers were grown at 650 625~ on (100),(lll) A, and (lll) B …
[PDF][PDF] Growth and Characterization of InP-InGaAsP Lattice-Matched Heterojunctions
GA Antypas, RL Moon - Citeseer
Liquid phase epitaxy has been employed for the growth of InP-InGaAsP lattice-matched
heterojunctions. The epitaxial layers were grown at 650 625~ on (100),(lll) A, and (lll) B …
heterojunctions. The epitaxial layers were grown at 650 625~ on (100),(lll) A, and (lll) B …
[引用][C] Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions
GA Antypas, RL Moon - Journal of the Electrochemical …, 1973 - ui.adsabs.harvard.edu
Growth and Characterization of InP - lnGaAsP Lattice-Matched Heterojunctions - NASA/ADS
Now on home page ads icon ads Enable full ADS view NASA/ADS Growth and Characterization …
Now on home page ads icon ads Enable full ADS view NASA/ADS Growth and Characterization …
[引用][C] Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions
GA Antypas, RL Moon - Journal of The Electrochemical Society, 1973 - cir.nii.ac.jp
Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions | CiNii Research
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CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …