High-performance laser diodes with emission wavelengths above 1100 nm and very small vertical divergence of the far field

F Bugge, H Wenzel, B Sumpf, G Erbert… - IEEE photonics …, 2005 - ieeexplore.ieee.org
The effect of variations in the vertical structure on the performance of AlGaAs-GaAs laser
diodes with an InGaAs quantum well (QW) emitting around 1120 nm was investigated. With …
被引用次数：9 相关文章

[引用][C] High-performance laser diodes with emission wavelengths above 1100 nm and very small vertical divergence of the far field

F Bugge, H Wenzel, B Sumpf… - IEEE Photonics …, 2005 - ui.adsabs.harvard.edu
High-performance laser diodes with emission wavelengths above 1100 nm and very small
vertical divergence of the far field - NASA/ADS Now on home page ads icon ads Enable full …
[PDF] academia.edu

[PDF][PDF] High-Performance Laser Diodes With Emission Wavelengths Above 1100 nm and Very Small Vertical Divergence of the Far Field

F Bugge, H Wenzel, B Sumpf, G Erbert… - IEEE PHOTONICS …, 2005 - academia.edu
The effect of variations in the vertical structure on the performance of AlGaAs–GaAs laser
diodes with an InGaAs quantum well (QW) emitting around 1120 nm was investigated. With …

[引用][C] High-performance laser diodes with emission wavelengths above 1100 nm and very small vertical divergence of the far field

F BUGGE, H WENZEL… - IEEE …, 2005 - Institute of Electrical and Electronics …