InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

RD Dupuis, JH Ryou, RD Heller, G Walter… - MRS Online …, 2001 - cambridge.org
We describe the operation of lasers having active regions composed of InP self-assembled
quantum dots embedded in In0. 5Al0. 3Ga0. 2P grown on GaAs (100) substrates by …
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InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

RD Dupuis, JH Ryou, RD Heller, G Walter… - MRS Online …, 2001 - Springer
We describe the operation of lasers having active regions composed of InP self-assembled
quantum dots embedded in In0. 5Al 0.3 Ga 0.2 P grown on GaAs (100) substrates by …

InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition

RD Dupuis, JH Ryou, RD Heller… - MRS Online …, 2001 - repository.ias.ac.in
We describe the operation of lasers having active regions composed of InP self-assembled
quantum dots embedded in In0. 5Al 0.3 Ga 0.2 P grown on GaAs (100) substrates by …

InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

RD Dupuis, JH Ryou, RD Heller, G Walter… - MRS Online …, 2001 - cambridge.org
We describe the operation of lasers having active regions composed of InP selfassembled
quantum dots embedded in In0. 5Al0. 3Ga0. 2P grown on GaAs (100) substrates by …

InP Self Assembled Quantum Dot Lasers Grown on GaAs Substrates by Metalorganic Chemical Vapor Deposition

RD Dupuis, JH Ryou, RD Heller, G Walter… - MRS Online …, 2001 - Springer
We describe the operation of lasers having active regions composed of InP selfassembled
quantum dots embedded in In 0.5 Al 0.3 Ga 0.2 P grown on GaAs (100) substrates by …