Full View

Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio

K Hosen, MS Islam, C Stampfl, J Park - IEEE Access, 2021 - ieeexplore.ieee.org
Gate-all-around (GAA) field effect transistors (FETs) have appeared as one of the potential
candidates for the electrostatic integrity required to reduce MOSFETs to minimum channel …
被引用次数：9 相关文章

[引用][C] Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio

K Hosen, MS Islam, C Stampfl, J Park - IEEE Access, 2021 - ui.adsabs.harvard.edu
Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET
With Reduced Sub-Threshold Swing and High On/Off Ratio - NASA/ADS Now on home page …
[PDF] academia.edu

[PDF][PDF] Numerical Analysis of Gate-All-Around HfO2/TiO2/HfO2 High-K Dielectric Based WSe2 NCFET With Reduced Sub-Threshold Swing and High On/Off Ratio

K HOSEN, MDS ISLAM, C STAMPFL, J PARK - academia.edu
ABSTRACT Gate-all-around (GAA) field effect transistors (FETs) have appeared as one of
the potential candidates for the electrostatic integrity required to reduce MOSFETs to …