Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth

DP Wilt, J Long, WC Dautremont-Smith, MW Focht… - Electronics Letters, 1986 - IET
A channelled-substrate buried-heterostructure InGaAsP/InP laser is demonstrated which
uses a semi-insulating InP base structure current confinement layer formed by OMVPE …
被引用次数：44 相关文章

[引用][C] Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth

DP Wilt, J Long, WC Dautremont-Smith, MW Focht… - Electronics Letters, 1986 - cir.nii.ac.jp
Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE
base structure and LPE regrowth | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ …

[引用][C] Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth

DP WILT, J LONG… - Electronics …, 1986 - pascal-francis.inist.fr
Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating
OMVPE base structure and LPE regrowth CNRS Inist Pascal-Francis CNRS Pascal and …

[引用][C] Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth

DP Wilt, J Long, WC Dautremont-Smith… - Electronics …, 1986 - ui.adsabs.harvard.edu
Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE
base structure and LPE regrowth - NASA/ADS Now on home page ads icon ads Enable full …

Channelled-substrate buried-heterostructure InGaAsP/InP laser with semi-insulating OMVPE base structure and LPE regrowth

DP Wilt, J Long, WC Dautremont-Smith, MW Focht… - Electronics Letters, 1986 - infona.pl
A channelled-substrate buried-heterostructure InGaAsP/InP laser is demonstrated which
uses a semi-insulating InP base structure current confinement layer formed by OMVPE …

[引用][C] Channelled-substrate buried-heterostructure InGaAsP

DP WILT, J LONG… - Electronics …, 1986 - Institution of Engineering and …