MOVPE growth of AlGaAs/GaInP diode lasers
F Bugge, A Knauer, S Gramlich, I Rechenberg… - Journal of electronic …, 2000 - Springer
GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …
[引用][C] MOVPE growth of AlGaAs/GaInP diode lasers
F Bugge, A Knauer, S Gramlich… - Journal of Electronic …, 2000 - search.proquest.com
GaAs—based diode lasers for emission wavelengths between 800 nm and 1060 nm with
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …
[PDF][PDF] MOVPE Growth of AlGaAs/GaInP Diode Lasers
F BUGGE, A KNAUER, S GRAMLICH… - Journal of …, 2000 - academia.edu
GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …
MOVPE growth of AlGaAs/GaInP diode lasers
F Bugge, A Knauer, S Gramlich, I Rechenberg… - Journal of Electronic …, 2000 - infona.pl
GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …
MOVPE growth of AlGaAs/GaInP diode lasers
F Bugge, A Knauer, S Gramlich… - Journal of …, 2000 - ui.adsabs.harvard.edu
GaAs-based diode lasers for emission wavelengths between 800 nm and 1060 nm with
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …
AlGaAs-cladding and GaInP-waveguide layers were grown by MOVPE. For wavelengths …