Gate sizing: FinFETs vs 32nm bulk MOSFETs
B Swahn, S Hassoun - Proceedings of the 43rd annual Design …, 2006 - dl.acm.org
FinFET devices promise to replace traditional MOSFETs because of superior ability in
controlling leakage and minimizing short channel effects while delivering a strong drive …
controlling leakage and minimizing short channel effects while delivering a strong drive …
[PDF][PDF] Gate Sizing: FinFETs vs 32nm Bulk MOSFETs
B Swahn, S Hassoun - 2006 - Citeseer
FinFET devices promise to replace traditional MOSFETs because of superior ability in
controlling leakage and minimizing short channel effects while delivering a strong drive …
controlling leakage and minimizing short channel effects while delivering a strong drive …
[PDF][PDF] Gate Sizing: FinFETs vs 32nm Bulk MOSFETs
B Swahn, S Hassoun - 2006 - cs.tufts.edu
FinFET devices promise to replace traditional MOSFETs because of superior ability in
controlling leakage and minimizing short channel effects while delivering a strong drive …
controlling leakage and minimizing short channel effects while delivering a strong drive …
[PDF][PDF] Gate Sizing: FinFETs vs 32nm Bulk MOSFETs
B Swahn, S Hassoun - 2006 - scholar.archive.org
FinFET devices promise to replace traditional MOSFETs because of superior ability in
controlling leakage and minimizing short channel effects while delivering a strong drive …
controlling leakage and minimizing short channel effects while delivering a strong drive …
[PDF][PDF] Gate Sizing: FinFETs vs 32nm Bulk MOSFETs
B Swahn, S Hassoun - 2006 - researchgate.net
FinFET devices promise to replace traditional MOSFETs because of superior ability in
controlling leakage and minimizing short channel effects while delivering a strong drive …
controlling leakage and minimizing short channel effects while delivering a strong drive …
Gate sizing: finFETs vs 32nm bulk MOSFETs
B Swahn, S Hassoun - 2006 43rd ACM/IEEE Design Automation Conference - infona.pl
FinFET devices promise to replace traditional MOSFETs because of superior ability in
controlling leakage and minimizing short channel effects while delivering a strong drive …
controlling leakage and minimizing short channel effects while delivering a strong drive …
[引用][C] Gate sizing: finFETs vs 32nm bulk MOSFETs
B Swahn, S Hassoun - 2006 43rd ACM/IEEE Design Automation …, 2006 - cir.nii.ac.jp
Gate sizing: finFETs vs 32nm bulk MOSFETs
B Swahn, S Hassoun - 2006 43rd ACM/IEEE Design …, 2006 - ieeexplore.ieee.org
FinFET devices promise to replace traditional MOSFETs because of superior ability in
controlling leakage and minimizing short channel effects while delivering a strong drive …
controlling leakage and minimizing short channel effects while delivering a strong drive …
[PDF][PDF] Gate Sizing: FinFETs vs 32nm Bulk MOSFETs
B Swahn, S Hassoun - 2006 - cs.tufts.edu
FinFET devices promise to replace traditional MOSFETs because of superior ability in
controlling leakage and minimizing short channel effects while delivering a strong drive …
controlling leakage and minimizing short channel effects while delivering a strong drive …
[PDF][PDF] Gate Sizing: FinFETs vs 32nm Bulk MOSFETs
B Swahn, S Hassoun - 2006 - scholar.archive.org
FinFET devices promise to replace traditional MOSFETs because of superior ability in
controlling leakage and minimizing short channel effects while delivering a strong drive …
controlling leakage and minimizing short channel effects while delivering a strong drive …