Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof

O Khouri, G Pollaccia, F Pellizzer - US Patent 7,618,840, 2009 - Google Patents
(57) ABSTRACT A contact structure for a PCM device is formed by an elon gated formation
having a longitudinal extension parallel to the upper Surface of the body and an end face …
被引用次数：3 相关文章

Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof

O Khouri, G Pollaccia, F Pellizzer - US Patent App. 11/468,153, 2006 - Google Patents
(57) ABSTRACT A contact structure for a PCM device is formed by an elongated formation
having a longitudinal extension parallel to the upper Surface of the body and an end face …

Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof

O Khouri, G Pollaccia, F Pellizzer - US Patent 7,618,840, 2009 - freepatentsonline.com
A contact structure for a PCM device is formed by an elongated formation having a
longitudinal extension parallel to the upper surface of the body and an end face extending in …

SUBLITHOGRAPHIC CONTACT STRUCTURE, IN PARTICULAR FOR A PHASE CHANGE MEMORY CELL, AND FABRICATION PROCESS THEREOF

O Khouri, G Pollaccia… - US Patent App. 11 …, 2006 - freepatentsonline.com
A contact structure for a PCM device is formed by an elongated formation having a
longitudinal extension parallel to the upper surface of the body and an end face extending in …