[引用][C] Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

YA Bioud, A Boucherif, A Belarouci, E Paradis… - Nanoscale Research …, 2016 - cir.nii.ac.jp
Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type
GaAs | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 論文・データを …

Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

YA Bioud, A Boucherif, A Belarouci, E Paradis… - Nanoscale Research …, 2016 - infona.pl
We have performed a detailed characterization study of electrochemically etched p-type
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …

[引用][C] Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

YA Bioud, AA Boucherif, A Belarouci… - Nanoscale Research …, 2016 - hal.science
Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type
GaAs - Archive ouverte HAL Accéder directement au contenu Documentation FR Français (FR) …

Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs

YA Bioud, A Boucherif, A Belarouci… - Nanoscale …, 2016 - pubmed.ncbi.nlm.nih.gov
We have performed a detailed characterization study of electrochemically etched p-type
GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and …