The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

Solid-State Electronics, 2010 - Elsevier
The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on
the analog performance of strained Si nMOSFETs is investigated. The negative drain …
被引用次数：5 相关文章
[PDF] core.ac.uk

[PDF][PDF] The impact of self-heating and SiGe strain-relaxed buffer

OM Alatise, KSK Kwa, SH Olsen, AG O'Neill - 2010 - core.ac.uk
The impact of the SiGe strain relaxed buffer (SRB) thickness on the analog performance of
strained Si nMOSFETs is investigated. The negative drain conductance caused by self …
[PDF] psu.edu

[PDF][PDF] The impact of self-heating and SiGe strain-relaxed buffer

OM Alatise, KSK Kwa, SH Olsen, AG O'Neill - 2010 - Citeseer
The impact of the SiGe strain relaxed buffer (SRB) thickness on the analog performance of
strained Si nMOSFETs is investigated. The negative drain conductance caused by self …

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

OM Alatise, KSK Kwa, SH Olsen, AG O'Neill - Solid-State Electronics, 2010 - hero.epa.gov
The impact of the thickness of the silicon-germanium strain-relaxed buffer (SiGe SRB) on the
analog performance of strained Si nMOSFETs is investigated. The negative drain …

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

OM Alatise, KSK Kwa, SH Olsen, AG O'Neill - Solid State Electronics, 2010 - infona.pl
The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on
the analog performance of strained Si nMOSFETs is investigated. The negative drain …

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

OM Alatise, KSK Kwa, SH Olsen… - Solid-State …, 2010 - wrap.warwick.ac.uk
The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on
the analog performance of strained Si nMOSFETs is investigated. The negative drain …

[引用][C] The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

OM ALATISE, KSK KWA, SH OLSEN… - Solid-state …, 2010 - pascal-francis.inist.fr
The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog
performance of strained Si nMOSFETs CNRS Inist Pascal-Francis CNRS Pascal and …

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

OM Alatise, KSK Kwa, SH Olsen… - Solid State …, 2010 - ui.adsabs.harvard.edu
The impact of the thickness of the silicon-germanium strain-relaxed buffer (SiGe SRB) on the
analog performance of strained Si nMOSFETs is investigated. The negative drain …

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

OM Alatise, KSK Kwa, SH Olsen… - Solid-State Electronics, 2010 - eprints.ncl.ac.uk
The impact of the thickness of the silicon-germanium strain-relaxed buffer (SiGe SRB) on the
analog performance of strained Si nMOSFETs is investigated. The negative drain …
[PDF] warwick.ac.uk

[PDF][PDF] The impact of self-heating and SiGe strain-relaxed buffer

OM Alatise, KSK Kwa, SH Olsen, AG O'Neill - 2010 - wrap.warwick.ac.uk
The impact of the SiGe strain relaxed buffer (SRB) thickness on the analog performance of
strained Si nMOSFETs is investigated. The negative drain conductance caused by self …