Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures

S Adhikary, N Halder, S Chakrabarti, S Majumdar… - Journal of crystal …, 2010 - Elsevier
The self-assembled InAs/GaAs multilayer quantum dots (QDs) are formed in a strain-driven
process due to the lattice mismatch of the InAs/GaAs system. We have investigated strain …
被引用次数：83 相关文章

[引用][C] Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures

S ADHIKARY, N HALDER… - Journal of crystal …, 2010 - pascal-francis.inist.fr
Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures
CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple …

Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures

S Adhikary, N Halder, S Chakrabarti, S Majumdar… - Journal of Crystal …, 2010 - infona.pl
The self-assembled InAs/GaAs multilayer quantum dots (QDs) are formed in a strain-driven
process due to the lattice mismatch of the InAs/GaAs system. We have investigated strain …

Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures

S Adhikary, N Halder, S Chakrabarti… - Journal of Crystal …, 2010 - repository.ias.ac.in
The self-assembled InAs/GaAs multilayer quantum dots (QDs) are formed in a strain-driven
process due to the lattice mismatch of the InAs/GaAs system. We have investigated strain …

Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures

S Adhikary, N Halder, S Chakrabarti… - Journal of Crystal …, 2010 - ui.adsabs.harvard.edu
Abstract The self-assembled InAs/GaAs multilayer quantum dots (QDs) are formed in a strain-
driven process due to the lattice mismatch of the InAs/GaAs system. We have investigated …

Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures

S Adhikary, N Halder, S Chakrabarti… - Journal of Crystal …, 2010 - repository.ias.ac.in
The self-assembled InAs/GaAs multilayer quantum dots (QDs) are formed in a strain-driven
process due to the lattice mismatch of the InAs/GaAs system. We have investigated strain …

[引用][C] Investigation of strain in self-assembled multilayer InAs

S ADHIKARY, N HALDER, S CHAKRABARTI… - Journal of crystal …, 2010 - Elsevier