Selective area control of material properties in laser-assisted MOVPE of GaAs and AlGaAs

H Kukimoto, Y Ban, H Komatsu, M Takechi… - Journal of Crystal …, 1986 - Elsevier
Selective are controls of carrier concentrations in GaAs and alloy compositions in AlGaAs
have been studied by selectively irradiating the substrate with an ArF excimer laser during …
被引用次数：52 相关文章

Selective area control of material properties in laser-assisted MOVPE of GaAs and AlGaAs

H Kukimoto, Y Ban, H Komatsu… - Journal of Crystal …, 1986 - ui.adsabs.harvard.edu
Selective are controls of carrier concentrations in GaAs and alloy compositions in AlGaAs
have been studied by selectively irradiating the substrate with an ArF excimer laser during …

[引用][C] Selective area control of material properties in laser-assisted MOVPE of GaAs and AlGaAs

H Kukimoto, Y Ban, H Komatsu, M Takechi… - Journal of Crystal …, 1986 - cir.nii.ac.jp
Selective area control of material properties in laser-assisted MOVPE of GaAs and AlGaAs |
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