Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

J Shimizu, T Ohashi, K Matsuura… - 2017 IEEE Electron …, 2017 - ieeexplore.ieee.org
We investigate low-temperature formation process of sputtered-MoS 2 film. The MoS2 film
was formed by radio frequency (RF) sputtering. Then the sputtered-MoS 2 was annealed in …
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[引用][C] Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

J Shimizu, T Ohashi, K Matsuura, I Muneta… - 2017 IEEE Electron …, 2017 - cir.nii.ac.jp
Low-carrier density sputtered-MoS<inf>2</inf> film by H<inf>2</inf>S annealing for normally-off
accumulation-mode FET | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ …