Writing circuit for a phase change memory device

C Resta, F Bedeschi, F Pellizzer… - US Patent …, 2006 - Google Patents
(57) ABSTRACT A memory device of a phase change type, wherein a memory cell has a
memory element of calcogenic material Switche able between at least two phases …
被引用次数：89 相关文章

Writing circuit for a phase change memory device

C Resta, F Bedeschi, F Pellizzer… - US Patent …, 2006 - freepatentsonline.com
A memory device of a phase change type, wherein a memory cell has a memory element of
calcogenic material switcheable between at least two phases associated with two different …

Writing circuit for a phase change memory device

C Resta, F Bedeschi, F Pellizzer… - US Patent App. 10 …, 2005 - Google Patents
BACKGROUND 0.003 AS is known, phase change memory arrays are based upon memory
elements which use a class of materials that have the property of Switching between two …

Writing circuit for a phase change memory device

C Resta, F Bedeschi, F Pellizzer… - US Patent App. 10 …, 2005 - freepatentsonline.com
A memory device of a phase change type, wherein a memory cell has a memory element of
calcogenic material switcheable between at least two phases associated with two different …