X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface
T Akane, K Sugioka, K Midorikawa… - Journal of Applied …, 2001 - pubs.aip.org
InP-based compounds, such as InGaAsP, are key materials for high-performance photonic
and electronic devices. The important feature of the InGaAsP alloy is that the change of its …
and electronic devices. The important feature of the InGaAsP alloy is that the change of its …
X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface
T Akane, K Sugioka, K Midorikawa… - Journal of Applied …, 2001 - ui.adsabs.harvard.edu
Nitridation of InP is performed by KrF excimer laser irradiation in an NH 3 ambient. The N-In
and NP bonds are formed in the irradiated area in proportion to the number of laser pulses …
and NP bonds are formed in the irradiated area in proportion to the number of laser pulses …
[引用][C] X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface
T Akane, K Sugioka, K Midorikawa… - Journal of Applied …, 2001 - pubs.aip.org
Nitridation of InP is performed by KrF excimer laser irradiation in an NH 3 ambient. The N–In
and N–P bonds are formed in the irradiated area in proportion to the number of laser pulses …
and N–P bonds are formed in the irradiated area in proportion to the number of laser pulses …
X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface
T Akane, K Sugioka, K Midorikawa… - Journal of Applied …, 2001 - aip.scitation.org
Nitridation of InP is performed by KrF excimer laser irradiation in an NH 3 ambient. The N–In
and N–P bonds are formed in the irradiated area in proportion to the number of laser pulses …
and N–P bonds are formed in the irradiated area in proportion to the number of laser pulses …
[PDF][PDF] X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface
T Akane, K Sugioka, K Midorikawa… - JOURNAL OF …, 2001 - researchgate.net
InP-based compounds, such as InGaAsP, are key materials for high-performance photonic
and electronic devices. The important feature of the InGaAsP alloy is that the change of its …
and electronic devices. The important feature of the InGaAsP alloy is that the change of its …
[PDF][PDF] X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface
T Akane, K Sugioka, K Midorikawa… - JOURNAL OF …, 2001 - researchgate.net
InP-based compounds, such as InGaAsP, are key materials for high-performance photonic
and electronic devices. The important feature of the InGaAsP alloy is that the change of its …
and electronic devices. The important feature of the InGaAsP alloy is that the change of its …