A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications
F Torres, E Kerhervé, A Cathelin… - International Journal of …, 2021 - cambridge.org
This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted
Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) …
Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) …
A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications.
F Torres, E Kerhervé, A Cathelin… - International Journal of …, 2021 - search.ebscohost.com
This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted
Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) …
Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) …
A 31 GHz body-biased configurable power amplifier in 28 nm FD-SOI CMOS for 5 G applications
F Torres, E Kerhervé, A Cathelin… - International Journal of …, 2021 - search.proquest.com
This paper presents a 31 GHz integrated power amplifier (PA) in 28 nm Fully Depleted
Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) …
Silicon-On-Insulator Complementary Metal Oxide Semiconductor (FD-SOI CMOS) …