Electronic structure of bound excitons in semiconductors
B Monemar, WM Chen - Physica B+ C, 1987 - Elsevier
Some recent advances in the understanding of the electronic structure of bond excitons (BE:
s) in semiconductors are discussed, with the emphasis on properties of complex defects or …
s) in semiconductors are discussed, with the emphasis on properties of complex defects or …
[引用][C] Electronic structure of bound excitons in semiconductors
B Monemar, U Lindefelt, ME Pistol - Physica B & C, 1987 - diva-portal.org
ELECTRONIC STRUCTURE OF BOUND EXCITONS IN SEMICONDUCTORS
B MONEMAR, U LINDEFELT… - Shallow Impurity Centers …, 2012 - books.google.com
Some recent advances in the understanding of the electronic structure of bound excitons
(BE: s) in semiconductors are discussed, with the emphasis on properties of complex defects …
(BE: s) in semiconductors are discussed, with the emphasis on properties of complex defects …
[引用][C] Electronic structure of bound excitons in semiconductors
B Monemar, U Lindefelt, WM Chen - Physica B+ C, 1987 - cir.nii.ac.jp
Electronic structure of bound excitons in semiconductors
B Monemar, U Lindefelt, WM Chen - Physica B+ C, 1987 - ui.adsabs.harvard.edu
Some recent advances in the understanding of the electronic structure of bond excitons (BE:
s) in semiconductors are discussed, with the emphasis on properties of complex defects or …
s) in semiconductors are discussed, with the emphasis on properties of complex defects or …