Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas
M Wang, MJ Kushner - Journal of Vacuum Science & Technology A, 2011 - pubs.aip.org
Energetic ion bombardment during plasma etching of microelectronics devices is necessary
to activate chemical process and define features through the ions' anisotropic trajectories …
to activate chemical process and define features through the ions' anisotropic trajectories …
[PDF][PDF] Modeling of implantation and mixing damage during etching of SiO [sub 2] over Si in fluorocarbon plasmas
M Wang, MJ Kushner - 2011 - deepblue.lib.umich.edu
Energetic ion bombardment during plasma etching of microelectronics devices is necessary
to activate chemical process and define features through the ions' anisotropic trajectories …
to activate chemical process and define features through the ions' anisotropic trajectories …
[PDF][PDF] Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas
M Wang, MJ Kushner - scholar.archive.org
Energetic ion bombardment during plasma etching of microelectronics devices is necessary
to activate chemical process and define features through the ions' anisotropic trajectories …
to activate chemical process and define features through the ions' anisotropic trajectories …
[引用][C] Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas
M Wang, MJ Kushner - Journal of Vacuum Science …, 2011 - ui.adsabs.harvard.edu
Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon
plasmas - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …
plasmas - NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS …
[PDF][PDF] Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas
M Wang, MJ Kushner - cpseg.eecs.umich.edu
Energetic ion bombardment during plasma etching of microelectronics devices is necessary
to activate chemical process and define features through the ions' anisotropic trajectories …
to activate chemical process and define features through the ions' anisotropic trajectories …
Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas
M Wang, MJ Kushner - Journal of Vacuum Science & Technology A, 2011 - pubs.aip.org
Energetic ion bombardment during plasma etching of microelectronics devices is necessary
to activate chemical process and define features through the ions' anisotropic trajectories …
to activate chemical process and define features through the ions' anisotropic trajectories …
Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas
M Wang, MJ Kushner - Journal of Vacuum Science and Technology. A …, 2011 - inis.iaea.org
[en] Energetic ion bombardment during plasma etching of microelectronics devices is
necessary to activate chemical process and define features through the ions' anisotropic …
necessary to activate chemical process and define features through the ions' anisotropic …
[引用][C] Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas
M Wang, MJ Kushner - Journal of Vacuum Science & Technology A …, 2011 - cir.nii.ac.jp
Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon
plasmas | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …
plasmas | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …