High performance GeTe thermoelectrics enabled by lattice strain construction

M Liu, Y Sun, J Zhu, C Li, F Guo, Z Liu, M Guo, Y Zhu… - Acta Materialia, 2023 - Elsevier
Numerous intrinsic Ge vacancies in thermoelectric GeTe not only lead to overhigh carrier
concentration but also seriously deteriorate carrier mobility, which shackles its …
被引用次数：16 相关文章

High performance GeTe thermoelectrics enabled by lattice strain construction

M Liu, Y Sun, J Zhu, C Li, F Guo, Z Liu, M Guo… - Acta …, 2023 - ui.adsabs.harvard.edu
Numerous intrinsic Ge vacancies in thermoelectric GeTe not only lead to overhigh carrier
concentration but also seriously deteriorate carrier mobility, which shackles its …
[PDF] researchgate.net

[PDF][PDF] High performance GeTe thermoelectrics enabled by lattice strain construction

M Liu, Y Sun, J Zhu, C Li, F Guo, Z Liu, M Guo… - Acta …, 2023 - researchgate.net
Numerous intrinsic Ge vacancies in thermoelectric GeTe not only lead to overhigh carrier
concentration but also seriously deteriorate carrier mobility, which shackles its …