1.5? 1.7? m vpe InGaAsP/InP cw lasers
GH Olsen, TJ Zamerowski, NJ Digiuseppe - Electronics Letters, 1980 - infona.pl
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[引用][C] 1.5–1.7 μm vpe InGaAsP/InP cw lasers
GH Olsen, TJ Zamerowski, NJ Digiuseppe - Electronics Letters, 1980 - cir.nii.ac.jp
1.5–1.7 μm vpe InGaAsP/InP cw lasers | CiNii Research CiNii 国立情報学研究所 学術情報
ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学図書館の本を …
ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす 大学図書館の本を …
1.5-1.7-micron VPE InGaAsP/InP CW lasers
GH Olsen, TJ Zamerowski… - Electronics Letters, 1980 - ui.adsabs.harvard.edu
The room-temperature CW operation of 1.5-1.7-micron InGaAsP/InP lasers fabricated by
conventional metal chloride-hydride vapor-phase epitaxy (VPE) is reported. The …
conventional metal chloride-hydride vapor-phase epitaxy (VPE) is reported. The …
[引用][C] 1.5–1.7 μm vpe InGaAsP/InP cw lasers
GH Olsen, TJ Zamerowski, NJ Digiuseppe - Electronics Letters, 1980 - IET
1-5-1-7 |im LASERS VPE InGaAsP/lnP CW Page 1 The interference signal is filtered through the
bandpass filter with unit impulse response g2(t) cos co0t. The noise n(t) is assumed to be a …
bandpass filter with unit impulse response g2(t) cos co0t. The noise n(t) is assumed to be a …