Gate Oxide Thickness and Drain Current Variation of Dual Gate Tunnel Field Effect Transistor

B Balaji, K Srinivasa Rao - International Journal of Engineering, 2024 - ije.ir
Two-dimensional analytical modelling of Dual Material Gate Tunnel Field Effect Transistor
with change in variation of gate oxide thickness (DMG-UOX-TFET) is proposed in this work …
被引用次数：3 相关文章
[PDF] ije.ir

[PDF][PDF] Gate Oxide Thickness and Drain Current Variation of Dual Gate Tunnel Field Effect Transistor

S Howldar, B Balaji, KS Rao - Transactions C: Aspects, 2024 - ije.ir
Two-dimensional analytical modelling of Dual Material Gate Tunnel Field Effect Transistor
with change in variation of gate oxide thickness (DMG-UOX-TFET) is proposed in this work …