A low power 1 Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

M Durlam, P Naji, A Omair, M DeHerrera… - 2002 Symposium on …, 2002 - ieeexplore.ieee.org
A low power 1 Mb Magnetoresistive Random Access Memory (MRAM) based on a 1-
Transistor and 1-Magnetic Tunnel Junction (1T1MTJ) bit cell is demonstrated. This is the …
被引用次数：114 相关文章

[引用][C] A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper Interconnects

M DURLAM - Symposium on VLSI Circuits Dig. Tech. Paper, 2002, 2002 - cir.nii.ac.jp
A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper Interconnects |
CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ …

[引用][C] A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

M DURLAM, P NAJI, C TRACY… - 2002 symposium on …, 2002 - pascal-francis.inist.fr
A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects
CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple …

[引用][C] A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper interconnects

M DURLAM - 2002 Symposium on VLSI Circuits Digest of Technical …, 2002 - cir.nii.ac.jp
A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper interconnects |
CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォーム …

[引用][C] A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with copper interconnects

M DURLAM, P NAJI, A OMAIR, M DEHERRERA… - 2002 symposium on VLSI …, 2002