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[HTML][HTML] Amorphous tin oxide applied to solution processed thin-film transistors

C Avis, YG Kim, J Jang - Materials, 2019 - mdpi.com
The limited choice of materials for large area electronics limits the expansion of applications.
Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film …
被引用次数：23 相关文章

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

C Avis, YG Kim, J Jang - Materials, 2019 - search.proquest.com
Being fabricated by vacuum process or solution process, indium gallium zinc oxide (IGZO),
zinc tin oxide (ZTO), indium zinc tin oxide (IZTO), and indium zinc oxide (IZO) have been …

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

C Avis, YG Kim, J Jang - Materials (Basel, Switzerland), 2019 - pubmed.ncbi.nlm.nih.gov
The limited choice of materials for large area electronics limits the expansion of applications.
Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film …
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[HTML][HTML] Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

C Avis, YG Kim, J Jang - Materials, 2019 - ncbi.nlm.nih.gov
The limited choice of materials for large area electronics limits the expansion of applications.
Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film …

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors.

C Avis, Y Kim, J Jang - Materials (Basel, Switzerland), 2019 - europepmc.org
The limited choice of materials for large area electronics limits the expansion of applications.
Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film …

[引用][C] Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

C Avis, YG Kim, J Jang - Materials, 2019 - ui.adsabs.harvard.edu
Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors - NASA/ADS Now
on home page ads icon ads Enable full ADS view NASA/ADS Amorphous Tin Oxide Applied …

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors.

C Avis, YG Kim, J Jang - Materials (1996-1944), 2019 - search.ebscohost.com
The limited choice of materials for large area electronics limits the expansion of applications.
Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film …

Amorphous tin oxide applied to solution processed thin-film transistors

C Avis, YG Kim, J Jang - Materials, 2019 - khu.elsevierpure.com
The limited choice of materials for large area electronics limits the expansion of applications.
Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film …
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[PDF][PDF] Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

C Avis, YG Kim, J Jang - pdfs.semanticscholar.org
The limited choice of materials for large area electronics limits the expansion of applications.
Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film …

Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors

C Avis, YG Kim, J Jang - Materials, 2019 - cir.nii.ac.jp
抄録< jats: p> The limited choice of materials for large area electronics limits the expansion
of applications. Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to …