Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L Wang, JM Chauveau, R Brenier, V Sallet… - Applied Physics …, 2016 - pubs.aip.org
Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …
被引用次数：15 相关文章

Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

G Brémond, JM Chauveau, R Brenier, V Sallet… - Applied Physics …, 2016 - osti.gov
Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …

Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L Wang, G Brémond, JM Chauveau, R Brenier… - Applied Physics …, 2016 - inis.iaea.org
[en] Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …

Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L Wang, JM Chauveau, R Brenier, V Sallet… - Applied Physics …, 2016 - pubs.aip.org
Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …

[引用][C] Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L Wang, J Chauveau, R Brenier, V Sallet… - Applied Physics …, 2016 - hal.science
Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading
resistance microscopy - Archive ouverte HAL Accéder directement au contenu Documentation …

Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy

L Wang, JM Chauveau, R Brenier… - Applied Physics …, 2016 - ui.adsabs.harvard.edu
Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally
doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in …