Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
PT Törmä, MA Odnoblyudov, VE Bougrov - Journal of Crystal Growth, 2008 - Elsevier
This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN
LEDs operating in the spectral range from 425 to 460nm. Samples were grown by …
LEDs operating in the spectral range from 425 to 460nm. Samples were grown by …
[引用][C] Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
PT Törmä, O Svensk, M Ali, S Suihkonen… - Journal of Crystal …, 2008 - cir.nii.ac.jp
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs | CiNii Research
CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データを …
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
PT Törmä, O Svensk, M Ali… - Journal of Crystal …, 2008 - ui.adsabs.harvard.edu
This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN
LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by …
LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by …
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
P Törmä, O Svensk, M Ali, S Suihkonen… - Journal of Crystal …, 2008 - research.aalto.fi
This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN
LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by …
LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by …
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
PT Törmä, O Svensk, M Ali, S Suihkonen… - Journal of Crystal …, 2008 - infona.pl
This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN
LEDs operating in the spectral range from 425 to 460nm. Samples were grown by …
LEDs operating in the spectral range from 425 to 460nm. Samples were grown by …
[引用][C] Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
PT TÖRMÄ, O SVENSK, M ALI… - Journal of crystal …, 2008 - pascal-francis.inist.fr
Keyword (en) III-V compound XRD Light emitting diodes Optoelectronic devices Spectral
line shift Electroluminescence VPE Atomic force microscopy Crystal morphology Surface …
line shift Electroluminescence VPE Atomic force microscopy Crystal morphology Surface …
Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
P Törmä, O Svensk, M Ali, S Suihkonen… - Journal of Crystal …, 2008 - cris.vtt.fi
This paper describes a study on the effect of InGaN underneath layer (UL) on InGaN/GaN
LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by …
LEDs operating in the spectral range from 425 to 460 nm. Samples were grown by …
[引用][C] Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs
PT Törmä, O Svensk, M Ali, S Suihkonen… - Journal of Crystal …, 2008 - elibrary.ru