Nanostructuring-induced modification of optical properties of p-GaAs (1 0 0)
M Naddaf, S Saloum - Physica E: Low-dimensional Systems and …, 2009 - Elsevier
A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (100)
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
[引用][C] Nanostructuring-induced modification of optical properties of p-GaAs (100)
M NADDAF, S SALOUM - Physica. E, low-dimentional systems …, 2009 - pascal-francis.inist.fr
Nanostructuring-induced modification of optical properties of p-GaAs (100) CNRS Inist
Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple search …
Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple search …
Nanostructuring-Induced Modification of optical Properties of p-GaAs (100)
M Naddaf, S Saloum - Aalam Al-Zarra, 2010 - osti.gov
A pulsed anodic etching method has been utilized for nano structuring of p-type GaAs (100)
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
Nanostructuring-induced modification of optical properties of p-GaAs (1 0 0)
M Naddaf, S Saloum - Physica E Low-Dimensional Systems …, 2009 - ui.adsabs.harvard.edu
A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (1 0 0)
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
Nanostructuring-Induced Modification of optical Properties of p-GaAs (100)
M Naddaf, S Saloum - Aalam Al-Zarra, 2010 - inis.iaea.org
[en] A pulsed anodic etching method has been utilized for nano structuring of p-type GaAs
(100) surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
(100) surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
Nanostructuring-induced modification of optical properties of p-GaAs (100)
M Naddaf, S Saloum - Physica E: Low-dimensional Systems and …, 2009 - infona.pl
A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (100)
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
Nanostructuring-induced modification of optical properties of p-GaAs (100)
M Naddaf, S Saloum - Physica E: Low-dimensional Systems and …, 2009 - infona.pl
A pulsed anodic etching method has been utilized for nanostructuring of p-type GaAs (100)
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …
surface, using HCl-based solution as electrolyte. The resulting porous GaAs layer is …