Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

W Xu, H Wong, K Kakushima, H Iwai - Microelectronic engineering, 2015 - Elsevier
A quasi-analytical model bas been developed for predicting the current–voltage
characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect …
被引用次数：21 相关文章

Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

W Xu, H Wong, K Kakushima… - Microelectronic …, 2015 - scholars.cityu.edu.hk
A quasi-analytical model bas been developed for predicting the current-voltage
characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect …

Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

W Xu, H Wong, K Kakushima, H Iwai - Microelectronic Engineering, 2015 - infona.pl
A quasi-analytical model bas been developed for predicting the current–voltage
characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect …

Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

W Xu, H Wong, K Kakushima… - Microelectronic …, 2015 - scholar.nycu.edu.tw
A quasi-analytical model bas been developed for predicting the current-voltage
characteristics of a cylindrical surrounding gate metal-oxide-semiconductor field-effect …

Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

W Xu, H Wong, K Kakushima, H Iwai - Microelectronic Engineering, 2015 - dl.acm.org
Display Omitted A quasi-analytical model for ballistic surrounding gate MOSFET was
proposed. Quantum effects were incorporated in electrostatic characteristics. We obtained …