Low-threshold InGaAs/GaAs strained-layer quantum-well lasers (lambda= 0.98 micron) with GaInP cladding layers grown by chemical beam epitaxy

RM Kapre, WT Tsang, MC Wu… - Sources and Detectors …, 1993 - spiedigitallibrary.org
Strained InGaAs/AlGaAs quantum well (QW) lasers operating at 0.98 micrometers are
currently of great interest due to their suitability for pumping erbium-doped fiber amplifiers …
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Low-threshold InGaAs/GaAs strained-layer quantum-well lasers (lambda= 0.98 micron) with GaInP cladding layers grown by chemical beam epitaxy

R Kapre, WT Tsang, M Wu, YK Chen - spiedigitallibrary.org
ABSTRACT Strained InGaAS/AIGaAS quantum well (QW) lasers operating at 0.98 jim are
currently of great interest due to their suitability for pumping erbium-doped fiber amplifiers …

Low-threshold InGaAs/GaAs strained-layer quantum-well lasers (λ= 0.98 μm) with GaInP cladding layers grown by chemical beam epitaxy

RM Kapre, WT Tsang, MC Wu… - Sources and Detectors …, 1993 - ui.adsabs.harvard.edu
Abstract Strained InGaAs/AlGaAs quantum well (QW) lasers operating at 0.98 micrometers
are currently of great interest due to their suitability for pumping erbium-doped fiber …