Lasing characteristics of 1.2 µm GaInAsP LD on InP/Si substrate
GK Periyanayagam, T Nishiyama… - … status solidi (a), 2018 - Wiley Online Library
Crystal growth on a Si substrate for the fabrication of a 1.2 µm GaInAsP laser diode is
demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse …
demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse …
Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate
GK Periyanayagam, T Nishiyama… - Physica Status …, 2018 - ui.adsabs.harvard.edu
Crystal growth on a Si substrate for the fabrication of a 1.2 µm GaInAsP laser diode is
demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse …
demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse …
Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate.
GK Periyanayagam, T Nishiyama… - … Status Solidi. A …, 2018 - search.ebscohost.com
Crystal growth on a Si substrate for the fabrication of a 1.2 µm GaInAsP laser diode is
demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse …
demonstrated via metal organic vapor phase epitaxy and lasing operation in the pulse …
[引用][C] Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate
GK Periyanayagam, T Nishiyama, N Kamada… - physica status solidi …, 2018 - cir.nii.ac.jp
Lasing Characteristics of 1.2 µm GaInAsP LD on InP/Si Substrate | CiNii Research CiNii 国立
情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす …
情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ移動 論文・データをさがす …