Modification of the microroughness of molecular‐beam epitaxially grown GaAs/AlAs interfaces through changes in the growth temperature

DS Katzer, D Gammon, BV Shanabrook - Journal of Vacuum Science & …, 1992 - pubs.aip.org
The interfacial properties of a series of GaAs/AlAs quantum wells (QWs) grown by molecular‐
beam epitaxy is examined using photoluminescence (PL). These high‐quality QWs show …
被引用次数：8 相关文章

Modification of the microroughness of molecular‐beam epitaxially grown GaAs/AlAs interfaces through changes in the growth temperature

DS Katzer, D Gammon, BV Shanabrook - Journal of Vacuum Science & …, 1992 - pubs.aip.org
The interfacial properties of a series of GaAs/AlAs quantum wells (QWs) grown by molecular‐
beam epitaxy is examined using photoluminescence (PL). These high‐quality QWs show …

[引用][C] Modification of the microroughness of molecular-beam epitaxially grown GaAs/AlAs interfaces through changes in the growth temperature

DS KATZER, D GAMMON… - Journal of vacuum …, 1992 - pascal-francis.inist.fr
Modification of the microroughness of molecular-beam epitaxially grown GaAs/AlAs
interfaces through changes in the growth temperature CNRS Inist Pascal-Francis CNRS …

[引用][C] Modification of the microroughness of molecular-beam epitaxially grown GaAs/AlAs interfaces through changes in the growth temperature

DS Katzer, D Gammon… - Journal of Vacuum …, 1992 - ui.adsabs.harvard.edu
Modification of the microroughness of molecular-beam epitaxially grown GaAs/AlAs interfaces
through changes in the growth temperature - NASA/ADS Now on home page ads icon ads …

[引用][C] Modification of the microroughness of molecular-beam epitaxially grown GaAs

DS KATZER, D GAMMON… - Journal of vacuum …, 1992 - American Institute of Physics