V Goiffon, P Magnan, O Saint-pé, F Bernard, G Rolland - academia.edu
(CIS) manufactured using a 0.18 m imaging technology are presented through the behavior analysis of elementary structures, such as field oxide FET, gated diodes, photodiodes and …
V Goiffon, P Magnan, O Saint-pe, F Bernard… - IEEE Transactions on …, 2008 - infona.pl
Ionizing radiation effects on CMOS image sensors (CIS) manufactured using a 0.18 mum imaging technology are presented through the behavior analysis of elementary structures …
V Goiffon, P Magnan, O Saint-pe, F Bernard… - IEEE Transactions on …, 2008 - cir.nii.ac.jp
Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis | CiNii Research CiNii 国立情報学研究所 学術情報 …
V Goiffon, P Magnan, O Saint-Pe… - … on Nuclear Science, 2008 - ui.adsabs.harvard.edu
Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis - NASA/ADS Now on home page ads icon ads …
V Goiffon, P Magnan, O Saint-pé… - IEEE …, 2008 - researchgate.net
(CIS) manufactured using a 0.18 m imaging technology are presented through the behavior analysis of elementary structures, such as field oxide FET, gated diodes, photodiodes and …
V Goiffon, P Magnan, O Saint-Pé, F Bernard, G Rolland… - 2008 - core.ac.uk
Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis Page 1 To cite this version: Goiffon, Vincent and …
V Goiffon, P Magnan, O Saint-pé, F Bernard, G Rolland - core.ac.uk
(CIS) manufactured using a 0.18 m imaging technology are presented through the behavior analysis of elementary structures, such as field oxide FET, gated diodes, photodiodes and …