Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain
YW Chen, Z Tan, LF Zhao, J Wang, YZ Liu… - Chinese …, 2016 - iopscience.iop.org
Various biaxial compressive strained GaSb p-channel metal–oxide–semiconductor field-
effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial …
effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial …
Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain
YW Chen, YZ Liu, WH Duan, Z Tan, LF Zhao… - Chinese Physics …, 2016 - inis.iaea.org
[en] Various biaxial compressive strained GaSb p-channel metal–oxide–semiconductor field-
effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial …
effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial …
Mobility enhancement of strained GaSb p-channel metal-oxide-semiconductor field-effect transistors with biaxial compressive strain
C Yan-Wen, T Zhen, Z Lian-Feng, W Jing… - Chinese …, 2016 - ui.adsabs.harvard.edu
Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-
effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial …
effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial …