Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

RL Nigro - Materials Science in Semiconductor Processing, 2019 - Elsevier
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-
SiC) layers grown on silicon substrates. In particular, the morphological, electrical and …
被引用次数：17 相关文章

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

M Spera, G Greco, RL Nigro, C Bongiorno… - arXiv preprint arXiv …, 2020 - arxiv.org
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-
SiC) layers grown on silicon substrates. In particular, the morphological, electrical and …

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

M Spera, G Greco, R Lo Nigro, C Bongiorno… - arXiv e …, 2020 - ui.adsabs.harvard.edu
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-
SiC) layers grown on silicon substrates. In particular, the morphological, electrical and …
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[HTML][HTML] Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

M Spera, G Greco, RL Nigro, C Bongiorno… - researchain.net
This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-
SiC) layers grown on silicon substrates. In particular, the morphological, electrical and …