Influence of composition of SiCN as interfacial layer on plasma activated direct bonding

F Inoue, L Peng, S Iacovo… - ECS Journal of Solid …, 2019 - iopscience.iop.org
Surface activated bonding is more and more attractive as a key technology to realize higher
performance CMOS devices independent of scaling. The major challenge of dielectric …
被引用次数：64 相关文章

[引用][C] Influence of composition of SiCN as interfacial layer on plasma activated direct bonding

F Inoue, L Peng, S Iacovo, A Phommahaxay… - 2019 - imec-publications.be
Influence of composition of SiCN as interfacial layer on plasma activated direct bonding
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[引用][C] Influence of Composition of SiCN as Interfacial Layer on Plasma Activated Direct Bonding

F Inoue, L Peng, S Iacovo, A Phommahaxay… - ECS Journal of Solid …, 2019 - cir.nii.ac.jp