Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gap
W Yanwachirakul, N Miyashita… - Japanese Journal of …, 2017 - iopscience.iop.org
InGaAs and GaNAs were selected as components of a multiple quantum well (MQW) with a
free-barrier conduction band (FB-CB) in which the quantum confinement for electrons was …
free-barrier conduction band (FB-CB) in which the quantum confinement for electrons was …
[PDF][PDF] Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gap
M Sugiyama, Y Wang, H Fujii - Japanese Journal of Applied …, 2017 - scholar.archive.org
InGaAs and GaNAs were selected as components of a multiple quantum well (MQW) with a
free-barrier conduction band (FB-CB) in which the quantum confinement for electrons was …
free-barrier conduction band (FB-CB) in which the quantum confinement for electrons was …
[引用][C] Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gap
W Yanwachirakul, N Miyashita, H Sodabanlu… - Japanese Journal of …, 2017 - cir.nii.ac.jp
Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy
gap | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …
gap | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索 …
Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gap
W Yanwachirakul, N Miyashita… - … Journal of Applied …, 2017 - ui.adsabs.harvard.edu
InGaAs and GaNAs were selected as components of a multiple quantum well (MQW) with a
free-barrier conduction band (FB-CB) in which the quantum confinement for electrons was …
free-barrier conduction band (FB-CB) in which the quantum confinement for electrons was …