Oxygen induced strong mobility modulation in few-layer black phosphorus

C Han, Z Hu, A Carvalho, N Guo, J Zhang, F Hu… - 2D …, 2017 - iopscience.iop.org
Abstract 2D black phosphorus configured field-effect transistors generally show a hole-
transport-dominated ambipolar characteristic, owing to the severely restricted electron …
被引用次数：56 相关文章

Oxygen induced strong mobility modulation in few-layer black phosphorus

C Han, Z Hu, A Carvalho, N Guo, J Zhang, F Hu… - 2D …, 2017 - ui.adsabs.harvard.edu
Abstract 2D black phosphorus configured field-effect transistors generally show a hole-
transport-dominated ambipolar characteristic, owing to the severely restricted electron …

Oxygen induced strong mobility modulation in few-layer black phosphorus

C Han, W Chen, Z Hu, N Guo, B Lei, C Zhang… - 2D Materials, 2017 - inis.iaea.org
[en] 2D black phosphorus configured field-effect transistors generally show a hole-transport-
dominated ambipolar characteristic, owing to the severely restricted electron mobility by air …

Oxygen induced strong mobility modulation in few-layer black phosphorus

C Han, Z Hu, A Carvalho, N Guo, J Zhang, F Hu… - 2017 - hero.epa.gov
Abstract 2D black phosphorus configured field-effect transistors generally show a hole-
transport-dominated ambipolar characteristic, owing to the severely restricted electron …