Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

KC Zeng, JY Lin, HX Jiang, A Salvador… - Applied physics …, 1997 - pubs.aip.org
Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have
been investigated by picosecond time-resolved photoluminescence (PL) measurements …
被引用次数：67 相关文章

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

KC Zeng, JY Lin, HX Jiang, A Salvador… - Applied Physics …, 1997 - cir.nii.ac.jp
抄録< jats: p> Effects of well thickness and Si doping on the optical properties of GaN/AlGaN
(MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) …
[PDF] academia.edu

[PDF][PDF] Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

KC Zeng, JY Lin, HX Jiang, A Salvador… - Applied Physics …, 1997 - academia.edu
Effects of well thickness and Si doping on the optical properties of GaN/AlGaN MQWs have
been investigated by picosecond time-resolved photoluminescence PL measurements. Our …

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

KC Zeng, JY Lin, HX Jiang, A Salvador… - Applied Physics …, 1997 - ui.adsabs.harvard.edu
Abstract Effects of well thickness and Si doping on the optical properties of GaN/AlGaN
(MQWs) have been investigated by picosecond time-resolved photoluminescence (PL) …
[PDF] ttu.edu

[PDF][PDF] Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

KC Zeng, JY Lin, HX Jiang, A Salvador… - Applied Physics …, 1997 - depts.ttu.edu
Effects of well thickness and Si doping on the optical properties of GaN/AlGaN MQWs have
been investigated by picosecond time-resolved photoluminescence PL measurements. Our …

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

KC Zeng, JY Lin, HX Jiang, A Salvador, G Popovici… - pubs.aip.org
Effects of well thickness and Si doping on the optical properties of GaN/AlGaN MQWs have
been investigated by picosecond time-resolved photoluminescence PL measurements. Our …
[PDF] archive.org

[PDF][PDF] Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

KC Zeng, JY Lin, HX Jiang, A Salvador… - Applied Physics …, 1997 - scholar.archive.org
Effects of well thickness and Si doping on the optical properties of GaN/AlGaN MQWs have
been investigated by picosecond time-resolved photoluminescence PL measurements. Our …

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

KC Zeng, JY Lin, HX Jiang, A Salvador, G Popovici… - Applied Physics …, 1997 - osti.gov
Effects of well thickness and Si doping on the optical properties of GaN/AlGaN (MQWs) have
been investigated by picosecond time-resolved photoluminescence (PL) measurements …

[引用][C] EFFECTS OF WELL THICKNESS AND SI DOPING ON THE OPTICAL PROPERTIES OF GAN/ALGAN MULTIPLE QUANTUM WELLS

KC ZENG, JY LIN, HX JIANG… - Applied …, 1997 - American Institute of Physics