Novel optical and structural properties of porous GaAs formed by anodic etching of n+-GaAs in a HF:C2H5OH:HCl:H2O2:H2O electrolyte: effect of etching time
M Naddaf, M Saad - Journal of Materials Science: Materials in Electronics, 2013 - Springer
Porous GaAs layers have been formed by anodic etching of n+-type GaAs (10.0) substrates
in a HF: C 2 H 5 OH: HCl: H 2 O 2: H 2 O electrolyte. A dramatic impact of etching time on the …
in a HF: C 2 H 5 OH: HCl: H 2 O 2: H 2 O electrolyte. A dramatic impact of etching time on the …
Novel optical and structural properties of porous GaAs formed by anodic etching of n±GaAs in a HF: C_2H_5OH: HCl: H_2O_2: H_2O electrolyte: effect of etching time
M Naddaf, M Saad - Aalam Al-Zarra, 2014 - inis.iaea.org
[en] Porous GaAs layers have been formed by anodic etching of n±type GaAs (10.0)
substrates in a HF: C_2H_5OH: HCl: H_2O_2: H_2O electrolyte. A dramatic impact of …
substrates in a HF: C_2H_5OH: HCl: H_2O_2: H_2O electrolyte. A dramatic impact of …
[引用][C] Novel optical and structural properties of porous GaAs formed by anodic etching of n+-GaAs in a HF: C2H5OH: HCl: H2O2: H2O electrolyte: effect of etching …
M NADDAF, M SAAD - Journal of materials science. Materials …, 2013 - pascal-francis.inist.fr
Novel optical and structural properties of porous GaAs formed by anodic etching of n+-GaAs in a
HF:C2H5OH:HCl:H2O2:H2O electrolyte: effect of etching time CNRS Inist Pascal-Francis CNRS …
HF:C2H5OH:HCl:H2O2:H2O electrolyte: effect of etching time CNRS Inist Pascal-Francis CNRS …
Novel optical and structural properties of porous GaAs formed by anodic etching of n+-GaAs in a HF: C2H5OH: HCl: H2O2: H2O electrolyte: effect of etching time
M Naddaf, M Saad - Journal of Materials Science: Materials in Electronics, 2013 - infona.pl
Porous GaAs layers have been formed by anodic etching of n+-type GaAs (10.0) substrates
in a HF: C2H5OH: HCl: H2O2: H2O electrolyte. A dramatic impact of etching time on the …
in a HF: C2H5OH: HCl: H2O2: H2O electrolyte. A dramatic impact of etching time on the …
Novel optical and structural properties of porous GaAs formed by anodic etching of n^ sup+^-GaAs in a HF: C^ sub 2^ H^ sub 5^ OH: HCl: H2O2: H2O electrolyte …
M Naddaf, M Saad - Journal of Materials Science. Materials in …, 2013 - search.proquest.com
Porous GaAs layers have been formed by anodic etching of n^ sup+^-type GaAs (10.0)
substrates in a HF: C^ sub 2^ H^ sub 5^ OH: HCl: H2O2: H2O electrolyte. A dramatic impact …
substrates in a HF: C^ sub 2^ H^ sub 5^ OH: HCl: H2O2: H2O electrolyte. A dramatic impact …