Doped semiconductors with band-edge plasma frequencies

S Law, R Liu, D Wasserman - … of Vacuum Science & Technology B, 2014 - pubs.aip.org
In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as
an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping …
被引用次数：84 相关文章

Doped semiconductors with band-edge plasma frequencies

S Law, R Liu, D Wassermana - ieeexplore.ieee.org
In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as
an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping …

[引用][C] Doped semiconductors with band-edge plasma frequencies

S Law, R Liu, D Wasserman - Journal of Vacuum Science …, 2014 - ui.adsabs.harvard.edu
Doped semiconductors with band-edge plasma frequencies - NASA/ADS Now on home page
ads icon ads Enable full ADS view NASA/ADS Doped semiconductors with band-edge plasma …

Doped semiconductors with band-edge plasma frequencies

S Law, R Liu, D Wasserman - Journal of Vacuum Science and …, 2014 - experts.illinois.edu
In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as
an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping …
[PDF] researchgate.net

[PDF][PDF] Doped semiconductors with band-edge plasma frequencies

S Law, R Liu, D Wasserman - … of Vacuum Science & Technology B, 2014 - researchgate.net
In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as
an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping …

Doped semiconductors with band-edge plasma frequencies

S Law, R Liu, D Wasserman - … of Vacuum Science and Technology B …, 2014 - pure.psu.edu
In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as
an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping …

Doped semiconductors with band-edge plasma frequencies

S Law, R Liu, D Wasserman - … of Vacuum Science & Technology B, 2014 - pubs.aip.org
In this work, the authors demonstrate the potential of epitaxially grown highly doped InSb as
an engineered, wavelength-flexible mid-IR plasmonic material. The authors achieve doping …