GaInAsP/InP avalanche photodiodes

CE Hurwitz, JJ Hsieh - Applied Physics Letters, 1978 - pubs.aip.org
Avalanche photodiodes with fast response times and high quantum efficiencies in the 1. 0-1.
6-! lm wavelength region are expected to find wide use in low-loss wide-bandwidth optical …
被引用次数：150 相关文章

GaInAsP/InP avalanche photodiodes

CE Hurwitz, JJ Hsieh - Applied Physics Letters, 1978 - cir.nii.ac.jp
抄録< jats: p> Avalanche photodiodes for detection at 0.9–1.2 μm have been successfully
fabricated in epitaxial layers of GaInAsP on InP substrates. Uniform avalanche gains in …

[引用][C] GAINASPINP AVALANCHE PHOTODIODES.

CE HURWITZ, H JJ - 1978 - pascal-francis.inist.fr
GAINASPINP AVALANCHE PHOTODIODES. CNRS Inist Pascal-Francis CNRS Pascal and
Francis Bibliographic Databases Simple search Advanced search Search by classification …

[引用][C] GaInAsP/InP avalanche photodiodes

CE Hurwitz, JJ Hsieh - Applied Physics Letters, 1978 - pubs.aip.org
GainAsP /lnP avalanche photodiodes8 Page 1 GainAsP /lnP avalanche photodiodes8 ) CE
Hurwitz and JJ Hsieh Lincoln Laboratory, Massachusetts Institute of Technology, Lexington …

GaInAsP/InP Avalanche Photodiodes

CE Hurwitz, JJ Hsieh - Integrated and Guided Wave Optics, 1978 - opg.optica.org
An avalanche photodiode with high quantum efficiency in the 1.0-1.3 μm wavelength range
will be an important component of IOCs to be used in this low loss, low dispersion regime of …

GaInAsP/InP avalanche photodiodes

CE Hurwitz, JJ Hsieh - Applied Physics Letters, 1978 - ui.adsabs.harvard.edu
Avalanche photodiodes for detection at 0.9-1.2 μm have been successfully fabricated in
epitaxial layers of GaInAsP on InP substrates. Uniform avalanche gains in excess of 12, rise …