Thermoelectric properties of nanostructured bismuth–telluride thin films grown using pulsed laser deposition
Nanostructured n-type bismuth telluride (Bi 2 Te 3) thin films were grown on SiO 2/Si (1 0 0)
substrates at argon ambient pressure (P Ar) of 80 Pa by pulsed laser deposition (PLD). The …
substrates at argon ambient pressure (P Ar) of 80 Pa by pulsed laser deposition (PLD). The …
Thermoelectric properties of nanostructured bismuth-telluride thin films grown using pulsed laser deposition
PH Le, CN Liao, CW Luo, J Leu - JOURNAL OF ALLOYS AND …, 2014 - ir.lib.nycu.edu.tw
Nanostructured n-type bismuth telluride (Bi2Te3) thin films were grown on SiO2/Si (100)
substrates at argon ambient pressure (P-Ar) of 80 Pa by pulsed laser deposition (PLD). The …
substrates at argon ambient pressure (P-Ar) of 80 Pa by pulsed laser deposition (PLD). The …
Thermoelectric properties of nanostructured bismuth–telluride thin films grown using pulsed laser deposition
PH Le, CN Liao, CW Luo, J Leu - Journal of Alloys and Compounds, 2014 - infona.pl
Nanostructured n-type bismuth telluride (Bi2Te3) thin films were grown on SiO2/Si (100)
substrates at argon ambient pressure (PAr) of 80Pa by pulsed laser deposition (PLD). The …
substrates at argon ambient pressure (PAr) of 80Pa by pulsed laser deposition (PLD). The …
[PDF][PDF] Thermoelectric properties of nanostructured bismuth–telluride thin films grown using pulsed laser deposition
PH Le, CN Liao, CW Luo, J Leu - Journal of Alloys and Compounds, 2014 - academia.edu
abstract Nanostructured n-type bismuth telluride (Bi2Te3) thin films were grown on SiO2/Si
(100) substrates at argon ambient pressure (PAr) of 80 Pa by pulsed laser deposition (PLD) …
(100) substrates at argon ambient pressure (PAr) of 80 Pa by pulsed laser deposition (PLD) …
Thermoelectric properties of nanostructured bismuth-telluride thin films grown using pulsed laser deposition
PH Le, CN Liao, CW Luo, JP Leu - Journal of Alloys and …, 2014 - scholar.nycu.edu.tw
Nanostructured n-type bismuth telluride (Bi 2 Te 3) thin films were grown on SiO 2/Si (1 0 0)
substrates at argon ambient pressure (P Ar) of 80 Pa by pulsed laser deposition (PLD). The …
substrates at argon ambient pressure (P Ar) of 80 Pa by pulsed laser deposition (PLD). The …
[引用][C] Thermoelectric properties of nanostructured bismuth-telluride thin films grown using pulsed laser deposition
PHUU LE, CN LIAO, CWEI LUO… - Journal of alloys and …, 2014 - pascal-francis.inist.fr
Thermoelectric properties of nanostructured bismuth-telluride thin films grown using pulsed
laser deposition CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …
laser deposition CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic …
[引用][C] Thermoelectric properties of nanostructured bismuth–telluride thin films grown using pulsed laser deposition
PH Le, CN Liao, CW Luo, J Leu - Journal of Alloys and Compounds, 2014 - cir.nii.ac.jp
Thermoelectric properties of nanostructured bismuth–telluride thin films grown using pulsed
laser deposition | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ …
laser deposition | CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ …
Thermoelectric properties of nanostructured bismuth–telluride thin films grown using pulsed laser deposition
PH Le, CN Liao, CW Luo, J Leu - Journal of Alloys and Compounds, 2014 - infona.pl
Nanostructured n-type bismuth telluride (Bi2Te3) thin films were grown on SiO2/Si (100)
substrates at argon ambient pressure (PAr) of 80Pa by pulsed laser deposition (PLD). The …
substrates at argon ambient pressure (PAr) of 80Pa by pulsed laser deposition (PLD). The …