Field‐Induced n‐doping of black phosphorus for CMOS compatible 2D logic electronics with high electron mobility

Y Xu, J Yuan, K Zhang, Y Hou, Q Sun… - Advanced Functional …, 2017 - Wiley Online Library
Black phosphorus (BP) has been considered as a promising two‐dimensional (2D)
semiconductor beyond graphene owning to its tunable direct bandgap and high carrier …
被引用次数：109 相关文章

Field-Induced n-Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Y Xu, J Yuan, K Zhang, Y Hou, Q Sun, Y Yao… - Advanced Functional …, 2017 - hero.epa.gov
Black phosphorus (BP) has been considered as a promising two-dimensional (2D)
semiconductor beyond graphene owning to its tunable direct bandgap and high carrier …

Field-Induced n-Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Y Xu, J Yuan, K Zhang, Y Hou, Q Sun… - Advanced …, 2017 - research.monash.edu
Black phosphorus (BP) has been considered as a promising two-dimensional (2D)
semiconductor beyond graphene owning to its tunable direct bandgap and high carrier …

Field-Induced n-Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility.

Y Xu, J Yuan, K Zhang, Y Hou, Q Sun… - Advanced …, 2017 - search.ebscohost.com
Black phosphorus (BP) has been considered as a promising two-dimensional (2D)
semiconductor beyond graphene owning to its tunable direct bandgap and high carrier …