0.67 µm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
K Kishino, Y Koizumi, A Yokochi… - Japanese journal of …, 1984 - iopscience.iop.org
Room temperature pulsed operation of 0.67 µm wavelength GaInAsP/AlGaAs lasers on
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …
[引用][C] 0.67 μm Room-temperature operation of GaInAsP/AlGaAs lasers on GaAs prepared by LPE
K KISHINO, Y KOIZUMI, A YOKOCHI… - Japanese journal of …, 1984 - pascal-francis.inist.fr
0.67 μm Room-temperature operation of GaInAsP/AlGaAs lasers on GaAs prepared by LPE
CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple …
CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple …
0.67 μm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
K Kishino, Y Koizumi, A Yokochi… - … Journal of Applied …, 1984 - ui.adsabs.harvard.edu
Room temperature pulsed operation of 0.67 μm wavelength GaInAsP/AlGaAs lasers on
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …
0.67 µm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
K Kishino, Y Koizumi, A Yokochi, S Kinoshita… - Japanese Journal of …, 1984 - cir.nii.ac.jp
抄録< jats: p> Room temperature pulsed operation of 0.67 µm wavelength GaInAsP/AlGaAs
lasers on GaAs was achieved, where the lattice constant of GaInAsP active layer neraly …
lasers on GaAs was achieved, where the lattice constant of GaInAsP active layer neraly …
[引用][C] 0.67 μm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
K Kishino, Y Koizumi, A Yokochi, S Kinoshita… - Japanese Journal of …, 1984 - jlc.jst.go.jp
Room temperature pulsed operation of 0.67 μm wavelength GaInAsP/AlGaAs lasers on
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …
[引用][C] 0.67 μm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
K Kishino, Y Koizumi, A Yokochi, S Kinoshita… - Japanese Journal of …, 1984 - jlc.jst.go.jp
Room temperature pulsed operation of 0.67 μm wavelength GaInAsP/AlGaAs lasers on
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …
0.67 μm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
K Katsumi, K Yoshihiro, Y Akira, K Susumu… - Japanese Journal of …, 1984 - cir.nii.ac.jp
抄録 Room temperature pulsed operation of 0.67 μm wavelength GaInAsP/AlGaAs lasers on
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …
GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched …