Comparison of single-and two-phase LPE growth methods for InGaAsP/InP lasers and LEDs

I Ladany, FZ Hawrylo - Journal of Crystal Growth, 1981 - Elsevier
Two well known methods for growth of InGaAsP/InP material for emitters operating in the 1.3
μm range are the single phase method, in which accurately equilibrated melts used, and the …
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Comparison of single-and two-phase LPE growth methods for InGaAsP/InP lasers and LEDs

I Ladany, FZ Hawrylo - Journal of Crystal Growth, 1981 - ui.adsabs.harvard.edu
Two well known methods for growth of InGaAsP/InP material for emitters operating in the 1.3
μm range are the single phase method, in which accurately equilibrated melts used, and the …