Protection of on-chip memory systems against multiple cell upsets using double-adjacent error correction codes

H Jun, Y Lee - IEICE Transactions on Electronics, 2015 - search.ieice.org
As semiconductor devices scale into deep sub-micron regime, the reliability issue due to
radiation-induced soft errors increases in on-chip memory systems. Neutron-induced soft …
被引用次数：4 相关文章

Protection of On-chip Memory Systems against Multiple Cell Upsets Using Double-adjacent Error Correction Codes

H JUN, Y LEE - IEICE Transactions on Electronics, 2015 - jstage.jst.go.jp
As semiconductor devices scale into deep sub-micron regime, the reliability issue due to
radiation-induced soft errors increases in on-chip memory systems. Neutron-induced soft …

Protection of On-chip Memory Systems against Multiple Cell Upsets Using Double-adjacent Error Correction Codes

JUN Hoyoon, LEE Yongsurk - IEICE Transactions on Electronics, 2015 - cir.nii.ac.jp
抄録 As semiconductor devices scale into deep sub-micron regime, the reliability issue due
to radiation-induced soft errors increases in on-chip memory systems. Neutron-induced soft …

Protection of On-chip Memory Systems against Multiple Cell Upsets Using Double-adjacent Error Correction Codes

H JUN, Y LEE - IEICE Transactions on Electronics, 2015 - jlc.jst.go.jp
As semiconductor devices scale into deep sub-micron regime, the reliability issue due to
radiation-induced soft errors increases in on-chip memory systems. Neutron-induced soft …

[引用][C] Protection of On-chip Memory Systems against Multiple Cell Upsets Using Double-adjacent Error Correction Codes

H JUN, Y LEE - IEICE Transactions on Electronics, 2015 - ui.adsabs.harvard.edu
Protection of On-chip Memory Systems against Multiple Cell Upsets Using Double-adjacent
Error Correction Codes - NASA/ADS Now on home page ads icon ads Enable full ADS view …