Room temperature low threshold CW operation of MOCVD-grown AlGaAs/GaAs SQW lasers on Si substrates with SiO2 back-coating

T Egawa, H Tada, Y Kobayashi, T Soga, T Jimbo… - Journal of crystal …, 1991 - Elsevier
We demonstrate room temperature continuous-wave (CW) operation of Al 0.3 Ga 0.7
As/GaAs single quantum well (SQW) heterostructure lasers grown by metalorganic chemical …
被引用次数：2 相关文章

[引用][C] Room temperature low threshold CW operation of MOCVD-grown AlGaAs/GaAs SQW lasers on Si substrates with SiO2 back-coating

T EGAWA, H TADA, Y KOBAYASHI… - Journal of crystal …, 1990 - pascal-francis.inist.fr
Room temperature low threshold CW operation of MOCVD-grown AlGaAs/GaAs SQW
lasers on Si substrates with SiO2 back-coating CNRS Inist Pascal-Francis CNRS Pascal …

Room temperature low threshold CW operation of MOCVD-grown AlGaAs/GaAs SQW lasers on Si substrates with SiO sub 2 back-coating

T Egawa, H Tada, Y Kobayashi, T Soga, T Jimbo… - Journal of Crystal …, 1991 - osti.gov
We demonstrate room temperature continuous-wave (CW) operation of Al {sub 0.3} Ga {sub
0.7} As/GaAs single quantum well (SQW) heterostructure lasers grown by metalorganic …

Room temperature low threshold CW operation of MOCVD-grown AlGaAs/GaAs SQW lasers on Si substrates with SiO 2 back-coating

T Egawa, H Tada, Y Kobayashi, T Soga… - Journal of Crystal …, 1991 - ui.adsabs.harvard.edu
We demonstrate room temperature continuous-wave (CW) operation of Al 0.3 Ga 0.7
As/GaAs single quantum well (SQW) heterostructure lasers grown by metalorganic chemical …

[引用][C] Room temperature low threshold CW operation of MOCVD-grown AlGaAs

T EGAWA, H TADA, Y KOBAYASHI, T SOGA… - Journal of crystal …, 1990 - Elsevier