GaAlAs/GaAs surface emitting laser with high reflective TiO2/SiO2 multilayer Bragg reflector

S Kinoshita, T Sakaguchi, T Odagawa… - Japanese journal of …, 1987 - iopscience.iop.org
First, it has been made clear that the important parameters of the SE laser are its active layer
thickness d and the mirror reflectivity R. The required values of three parameters such as …

GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO2/SiO2 Multilayer Bragg Reflector

S Kinoshita, T Sakaguchi… - Japanese Journal of …, 1987 - ui.adsabs.harvard.edu
First, it has been made clear that the important parameters of the SE laser are its active layer
thickness d and the mirror reflectivity R. The required values of three parameters such as …

[引用][C] GaAlAs/GaAs surface emitting laser with high reflective TiO2/SiO2 multilayer Bragg reflector

S KINOSHITA, T SAKAGUCHI… - Japanese journal of …, 1987 - pascal-francis.inist.fr
GaAlAs/GaAs surface emitting laser with high reflective TiO2/SiO2 multilayer Bragg reflector
CNRS Inist Pascal-Francis CNRS Pascal and Francis Bibliographic Databases Simple …

[引用][C] GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO 2/SiO 2 Multilayer Bragg Reflector

S Kinoshita, T Sakaguchi, T Odagawa… - Japanese Journal of …, 1987 - jlc.jst.go.jp
First, it has been made clear that the important parameters of the SE laser are its active layer
thickness d and the mirror reflectivity R. The required values of three parameters such as …

GaAlAs/GaAs surface emitting laser with high-reflective TiO2/SiO2 multilayer Bragg reflector

S Kinoshita, T Sakaguchi, T Odagawa… - Conference on Lasers …, 1986 - opg.optica.org
A GaAIAs/GaAs surface emitting (SE) laser which can be produced by planar technology is
attractive in view of the increasing demands of short-wavelength applications such as short …

GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO2/SiO2 Multilayer Bragg Reflector

K Susumu, S Takahiro, O Tetsufumi… - Japanese Journal of …, 1987 - cir.nii.ac.jp
抄録 First, it has been made clear that the important parameters of the SE laser are its active
layer thickness d and the mirror reflectivity R. The required values of three parameters such …

GaAlAs/GaAs surface emitting laser with high reflective TiO/sub 2//SiO/sub 2/multilayer Bragg reflector

S Kinoshita, T Sakaguchi, T Odagawa, K Iga - Jpn. J. Appl. Phys., Part 1; …, 1987 - osti.gov
First, it has been made clear that the important parameters of the surface emitting (SE) laser
are its active layer thickness d and the mirror reflectivity R. The required values of threshold …

[引用][C] GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO 2/SiO 2 Multilayer Bragg Reflector

S Kinoshita, T Sakaguchi, T Odagawa… - Japanese Journal of …, 1987 - jlc.jst.go.jp
First, it has been made clear that the important parameters of the SE laser are its active layer
thickness d and the mirror reflectivity R. The required values of three parameters such as …

GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO2/SiO2 Multilayer Bragg Reflector

S Kinoshita, T Sakaguchi, T Odagawa… - Japanese Journal of …, 1987 - cir.nii.ac.jp
抄録< jats: p> First, it has been made clear that the important parameters of the SE laser are
its active layer thickness< jats: italic> d</jats: italic> and the mirror reflectivity< jats: italic> …

[引用][C] GaAlAs/GaAs surface emitting laser with high reflective TiO2/SiO2 multilayer Bragg reflector

S KINOSHITA, T SAKAGUCHI… - Japanese …, 1987 - Japanese journal of applied physics